- 您现在的位置：买卖IC网 > Sheet目录405 > DMG8880LK3-13 (Diodes Inc)MOSFET N-CH 30V 11A TO252-3L
DMG8880LK3
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±20
Unit
V
V
Continuous Drain Current (Note 4) V GS = 10V
Continuous Drain Current (Note 5) V GS = 10V
Pulsed Drain Current (Note 6)
Steady
State
Steady
State
T A = 25°C
T A = 85°C
T A = 25°C
T A = 85°C
I D
I D
I DM
11
8
16.5
12
48
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 4)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
P D
R θ JA
T J , T STG
Value
1.68
74.3
4.1
30.8
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
1.0
±100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1.2
-
-
-
1.5
5
8
22
0.7
2.3
7.5
12
-
1.0
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 11.6A
V GS = 4.5V, I D = 10.7A
V DS = 15V, I D = 15A
V GS = 0V, I SD = 2.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
t rr
Q rr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1289
187
162
0.97
27.6
14.4
3.6
4.9
7.04
17.52
36.13
19.67
17.6
65.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
V DS = 15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 10V, V DS = 15V,
I D = 11.6A, Ig = 1.0mA
V GS = 5V, V DS = 15V,
I D = 11.6A
V DD = 15V, V GS = 10V,
R G = 11 ? , I D = 11.6A,
R L = 1.3 ?
I F = 20A, dl/dt = 500A/ μ s
I F = 20A, dl/dt = 500A/ μ s
Notes:
4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2oz. copper, single sided.
6. Repetitive rating, pulse width limited by junction temperature and current limited by package.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG8880LK3
Document number: DS32052 Rev. 4 - 2
2 of 6
www.diodes.com
December 2010
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
DMG9926UDM-7
MOSFET N-CH DUAL 20V 4.2A SOT-26
DMG9926USD-13
MOSFET 2N-CH 20V 8A SOP8L
DMN100-7
MOSFET N-CH 30V 1.1A SC59-3
DMN1019UFDE-7
MOSFET N CH 12V 11A U-DFN2020-6E
DMN2004DMK-7
MOSFET DUAL N-CHAN 20V SOT-26
DMN2004DWK-7
MOSFET DUAL N-CHAN 20V SOT-363
DMN2004K-7
MOSFET N-CH 20V 540MA SOT23-3
DMN2004VK-7
MOSFET DUAL N-CHAN 20V SOT-563
相关代理商/技术参数
DMG8880LSS
制造商:Diodes Incorporated 功能描述:MOSFET N CH W DIO 30V 11.6A SO8 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIO, 30V, 11.6A, SO8 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIO, 30V, 11.6A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:11.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V ;RoHS Compliant: Yes
DMG8880LSS-13
功能描述:MOSFET MOSFET N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG904010R
功能描述:两极晶体管 - BJT COMP TRANS W/BLT IN RES FLT LD 1.6x1.6mm RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
DMG963010R
功能描述:开关晶体管 - 偏压电阻器 COMP TRANS W/BLT IN RES FLT LD 1.6x1.6mm RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
DMG963020R
功能描述:开关晶体管 - 偏压电阻器 COMP TRANS W/BLT IN RES FLT LD 1.6x1.6mm RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
DMG963030R
功能描述:开关晶体管 - 偏压电阻器 COMP TRANS W/BLT IN RES FLT LD 1.6x1.6mm RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
DMG963H10R
功能描述:开关晶体管 - 偏压电阻器 COMP TRANS W/BLT IN RES FLT LD 1.6x1.6mm RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
DMG963H50R
功能描述:开关晶体管 - 偏压电阻器 COMP TRANS W/BLT IN RES FLT LD 1.6x1.6mm RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel